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Freescale Semiconductor Technical Data
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRFG35005MT1 Rev. 3, 1/2006
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. * Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 450 mWatt Power Gain -- 11 dB Efficiency -- 25% * 4.5 Watts P1dB @ 3.55 GHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 10.5 0.07 (2) -5 30 - 65 to +150 175 - 20 to +85
(2)
Unit Vdc W W/C Vdc dBm C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Class AB Symbol RJC Value 14.2 (2) Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Simulated.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35005MT1 1
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 80 mA) Power Gain (VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz) Drain Efficiency (VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 450 mW Avg., IDQ = 80 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 - 1.1 10 -- 22 Typ 1.7 < 1.0 -- < 1.0 - 0.9 - 0.8 11 4.5 25 Max -- 100 600 9 - 0.7 - 0.6 -- -- -- Unit Adc Adc Adc mAdc Vdc Vdc dB W %
ARCHIVE INFORMATION
ACPR
--
- 42
- 39
dBc
MRFG35005MT1 2 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
VGS
VDD
C11
C10
C9
C8
C7
C6
C5 R1 C3 C4
C16
C17
C18
C19
C20
C21
C22
C14 C15
Z5 RF INPUT Z1 Z2 C1 C29 C28 C27 C26 C2 Z3 Z4 C12 Z6 Z7 Z8 Z9 Z10 Z11 C13
Z15 C23 Z16 Z17 C24 C25 Z18 RF OUTPUT
Z12 Z13 Z14
ARCHIVE INFORMATION
Z1, Z18 Z2 Z3 Z4 Z5, Z15 Z6, Z8, Z10 Z7, Z9
0.125 0.435 0.298 0.336 0.527 0.050 0.125
x 0.044 Microstrip x 0.044 Microstrip x 0.254 Microstrip x 0.590 Microstrip x 0.015 Microstrip x 0.025 Microstrip x 0.025 Microstrip
Z11 Z12 Z13 Z14 Z16 Z17 PCB
0.400 x 0.081 Microstrip 0.120 x 0.408 Microstrip 0.259 x 0.058 Microstrip 0.269 x 0.348 Microstrip 0.149 x 0.062 Microstrip 0.553 x 0.044 Microstrip Rogers 4350, 20 mil, r = 3.5
Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part C1, C24 C2 C3, C4, C14, C15 C5, C16 C6, C17 C7, C18 C8, C19 C9, C20 C10, C21 C11, C22 C12, C28 C13, C26, C27 C23 C25 C29 R1 Description 7.5 pF Chip Capacitors 0.4 pF Chip Capacitor (0805) 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 3.9 F Chip Capacitors 0.1 F Chip Capacitors 22 F, 35 V Tantalum Surface Mount Capacitors 0.1 pF Chip Capacitors (0805) 0.3 pF Chip Capacitors (0805) 1.0 pF Chip Capacitor (0805) 1.2 pF Chip Capacitor (0805) 0.9 pF Chip Capacitor (0805) 100 W Chip Resistor 08051J0R1BBT 08051J0R3BBT 08051J1R0BBT 08051J1R2BBT 08051J0R9BBT Part Number 100A7R5JP150X 08051J0R4BBT 08051J3R9BBT 100A100JP500X 100A101JP500X 100B101JP500X 100B102JP500X Manufacturer ATC AVX AVX ATC ATC ATC ATC ATC ATC Newark AVX AVX AVX AVX AVX Newark
MRFG35005MT1 RF Device Data Freescale Semiconductor 3
ARCHIVE INFORMATION
C7 C18 C6 C11 C10 C9 C8 R1 C3 C4 C14 C15 C5 C17 C16 C19 C20 C21 C22
C12
C13 C23
ARCHIVE INFORMATION
C1 C25 C29 C28 C27 C26
C24
MRFG35005M Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35005MT1 4 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
C2
TYPICAL CHARACTERISTICS
-10 IRL, INPUT RETURN LOSS (dB) IRL -20 VDS = 12 Vdc, IDQ = 85 mA f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA S = 0.868e-115.15_, L = 0.764e-139.11_ -20 ACPR (dBc) -10
-30 -40
-30 -40
-50 -60 0.01
ACPR
-50 -60
ARCHIVE INFORMATION
Pout, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power
20 17.5 G T , TRANSDUCER GAIN (dB) 15 VDS = 12 Vdc, IDQ = 85 mA f = 3.55 GHz, 8.5 P/A 3GPP W-CDMA S = 0.868e-115.18_, L = 0.764e-139.11_ PAE
40 35 30 GT 25 20 15 10 5 0 0.01 0.1 Pout, OUTPUT POWER (WATTS) 1 PAE, POWER ADDED EFFICIENCY (%)
12.5 10 7.5 5 2.5 0
Figure 4. Transducer Gain and Power Added Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown.
MRFG35005MT1 RF Device Data Freescale Semiconductor 5
ARCHIVE INFORMATION
0.1
1
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA
f GHz 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 S11 |S11| 0.903 0.903 0.901 0.901 0.902 0.900 0.901 0.901 0.899 0.899 0.901 0.900 0.899 0.900 0.899 0.898 0.901 0.897 0.903 0.901 0.900 0.900 0.899 0.902 0.903 0.902 0.903 0.904 0.904 0.903 0.906 0.905 0.904 0.906 0.906 0.905 0.906 0.906 0.904 0.903 0.902 0.901 0.899 0.899 0.898 0.894 0.895 - 171.71 - 173.53 - 175.37 - 177.11 - 178.58 179.95 178.58 177.36 176.17 174.93 173.84 172.74 171.57 170.42 169.31 168.10 166.96 165.99 164.48 163.52 160.23 159.17 158.30 157.39 156.46 155.63 154.92 154.09 153.38 152.74 152.00 151.41 150.85 150.13 149.60 149.11 148.41 147.74 147.11 146.23 145.41 144.66 143.78 142.76 141.87 140.80 139.70 |S21| 7.441 6.807 6.268 5.817 5.441 5.096 4.804 4.516 4.293 4.089 3.900 3.730 3.567 3.423 3.284 3.154 3.040 2.928 2.821 2.720 2.618 2.537 2.456 2.386 2.317 2.251 2.195 2.137 2.080 2.030 1.984 1.937 1.897 1.860 1.822 1.788 1.761 1.729 1.701 1.677 1.651 1.632 1.612 1.591 1.571 1.554 1.539 S21 83.44 81.55 79.64 77.76 75.93 74.17 72.37 70.46 68.89 67.19 65.58 63.88 62.18 60.54 58.91 57.19 55.59 54.05 52.41 50.95 49.25 47.79 46.40 44.91 43.49 41.97 40.59 39.12 37.80 36.43 34.98 33.71 32.47 31.10 29.77 28.49 27.10 25.78 24.47 22.98 21.58 20.17 18.88 17.38 15.88 14.50 12.83 |S12| 0.029 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 0.033 0.033 S12 4.18 3.31 2.49 1.53 0.64 - 0.21 - 0.90 - 1.80 - 2.30 - 3.17 - 4.01 - 4.63 - 5.38 - 6.01 - 6.66 - 7.52 - 8.14 - 8.73 - 9.30 - 9.89 - 10.77 - 11.27 - 11.82 - 12.27 - 12.67 - 13.06 - 13.50 - 13.91 - 14.35 - 14.79 - 15.36 - 15.79 - 16.26 - 16.74 - 17.43 - 17.97 - 18.45 - 18.73 - 19.16 - 19.61 - 20.07 - 20.42 - 20.71 - 21.29 - 21.77 - 22.47 - 23.36 |S22| 0.604 0.603 0.602 0.602 0.602 0.600 0.600 0.600 0.599 0.600 0.600 0.600 0.600 0.601 0.601 0.602 0.602 0.600 0.606 0.606 0.607 0.609 0.609 0.609 0.610 0.613 0.612 0.613 0.615 0.615 0.615 0.618 0.619 0.617 0.619 0.620 0.619 0.620 0.620 0.620 0.619 0.621 0.619 0.618 0.619 0.618 0.616 S22 - 171.44 - 172.51 - 173.76 - 175.04 - 176.15 - 177.32 - 178.45 - 179.44 179.38 178.20 176.10 175.06 174.08 173.04 171.90 171.14 170.54 169.31 168.98 170.81 170.02 169.38 168.87 168.03 167.41 166.88 165.94 165.27 164.72 163.90 163.26 162.83 162.02 161.22 160.82 160.12 159.20 158.79 158.15 157.20 156.64 156.02 155.10 154.49 154.05 153.08 177.19
ARCHIVE INFORMATION
MRFG35005MT1 6 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA (continued)
f GHz 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.895 0.893 0.893 0.894 0.892 0.890 0.892 0.891 0.888 0.890 0.889 0.887 0.889 0.888 0.887 0.888 0.887 0.887 0.887 0.888 0.888 0.887 0.888 0.887 0.886 0.887 0.886 0.884 0.885 0.885 0.884 0.883 0.882 0.881 0.880 0.879 0.878 0.877 0.876 0.874 0.874 0.870 0.867 0.866 138.63 137.48 136.05 134.72 133.46 131.81 130.31 128.98 127.31 125.83 124.49 122.78 121.40 119.96 118.32 116.96 115.68 114.24 113.05 111.84 110.59 109.45 108.32 107.24 106.10 105.02 104.22 103.08 102.00 101.08 100.08 98.90 97.99 96.91 95.41 94.29 92.80 91.10 89.66 87.90 86.08 84.39 82.48 80.32 |S21| 1.522 1.507 1.493 1.478 1.465 1.453 1.436 1.421 1.409 1.394 1.380 1.367 1.352 1.338 1.328 1.313 1.299 1.287 1.274 1.262 1.252 1.240 1.230 1.222 1.216 1.205 1.198 1.195 1.189 1.184 1.183 1.176 1.172 1.176 1.172 1.172 1.177 1.175 1.176 1.178 1.177 1.175 1.177 1.179 S21 11.37 9.90 8.24 6.55 4.95 3.30 1.60 0.04 - 1.72 - 3.40 - 4.89 - 6.59 - 8.31 - 9.91 - 11.56 - 13.16 - 14.69 - 16.36 - 17.90 - 19.43 - 20.85 - 22.36 - 24.01 - 25.35 - 26.93 - 28.43 - 29.78 - 31.44 - 33.00 - 34.46 - 35.96 - 37.67 - 39.19 - 40.74 - 42.48 - 44.02 - 45.83 - 47.87 - 49.70 - 51.58 - 53.56 - 55.56 - 57.53 - 59.75 |S12| 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.035 0.035 0.035 0.036 0.036 0.036 0.036 0.036 0.036 0.036 0.036 0.037 0.037 0.037 0.038 0.038 0.038 0.039 0.039 0.039 0.040 0.040 0.040 0.041 0.042 0.042 0.042 0.042 0.042 0.043 0.043 S12 - 24.77 - 26.15 - 27.11 - 27.92 - 28.51 - 29.31 - 29.98 - 30.69 - 31.47 - 32.45 - 33.06 - 33.59 - 34.06 - 34.46 - 35.34 - 36.09 - 36.68 - 37.71 - 38.84 - 39.90 - 40.73 - 41.33 - 41.73 - 42.00 - 42.60 - 43.13 - 43.70 - 44.59 - 45.54 - 46.22 - 46.93 - 48.09 - 49.06 - 49.87 - 50.58 - 51.24 - 52.21 - 53.61 - 55.11 - 56.51 - 57.66 - 58.60 - 59.41 - 60.39 |S22| 0.618 0.618 0.616 0.618 0.617 0.616 0.616 0.617 0.615 0.616 0.616 0.615 0.615 0.616 0.615 0.613 0.613 0.612 0.612 0.613 0.613 0.612 0.613 0.612 0.611 0.611 0.609 0.607 0.608 0.608 0.605 0.606 0.607 0.604 0.603 0.601 0.597 0.594 0.594 0.590 0.589 0.588 0.585 0.583 S22 152.46 151.97 150.93 150.06 149.53 148.45 147.51 146.90 145.95 145.01 143.59 142.69 141.92 141.09 140.03 139.19 138.40 137.36 136.45 135.74 134.56 133.64 133.05 131.91 130.81 130.15 128.89 127.57 126.81 125.63 124.16 123.26 122.03 120.40 119.45 118.22 116.51 115.24 113.89 112.15 110.76 109.40 107.71 144.44
ARCHIVE INFORMATION
MRFG35005MT1 RF Device Data Freescale Semiconductor 7
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NOTES
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MRFG35005MT1 8 RF Device Data Freescale Semiconductor
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NOTES
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MRFG35005MT1 RF Device Data Freescale Semiconductor 9
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NOTES
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MRFG35005MT1 10 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
G
RF Device Data Freescale Semiconductor
EEEEEE E EEEE E EEEEEE E EEEEEE EEE EEEEEE E
1 3 ZONE X
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
S
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC
MRFG35005MT1 11
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MRFG35005MT1
Rev. 12 3, 1/2006 Document Number: MRFG35005MT1
RF Device Data Freescale Semiconductor

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